Abstract
This study addressed a theoretical and detailed investigation of the valence-band electronic and optical properties of a laser-dressed GaAsSb-based Rosen–Morse quantum well. The one-dimensional Schrödinger equation was solved by a developed BenDaniel and Duke approach considering a position-dependent effective mass for a heavy hole. The spatial dependence of the heavy hole effective mass was determined as a function of Rosen–Morse geometry of the quantum well. The electronic studies were achieved using the Finite-Element Method considering Kramers–Henneberger transformation along with the lines of the Floquet technique. The linear and the third-order nonlinear optical absorption coefficients and refractive index changes were calculated under the approximation of a two-level system using the density matrix method. Calculations were completed to examine the effects of externally applied intense laser and electric fields, well width, and the maximum antimony content. A transition was observed from a single Rosen–Morse confinement profile to a double-type one with doubly degenerated energy states and a red-shifted optical spectrum when the quantum well was irradiated by an intense laser field. Moreover, the axial symmetry and degeneracy were broken along with the emergence of a blue-shifted optical spectrum when the laser-dressed confinement profile was affected by an electric field. The results suggest a strong correlation between the optical and electronic findings through analyzing the energy differences and the dipole transition matrix elements